| PART |
Description |
Maker |
| EM6160FV32BW-10L EM6160V32BW-10L EM6161FV32BW-10L |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic Sol...
|
| K6F3216U6M K6F3216U6M-F |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EM640FU16E |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| K6F2016U4E K6F2016U4E-F DSK6F2016U4E DS_K6F2016U4E |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| EM646FV16FU |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| EM643FV16FU |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| K6F8016R6B K6F8016R6B-F |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K6F1616T6B-TF70 K6F1616T6B-TF55 K6F1616T6B K6F1616 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 100万x16位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
http://
|
| HY62UF16404D |
x16|3V|55/70|Super Low Power Slow SRAM - 4M x16 | 3V的| 55/70 |超级低功耗SRAM的速度 4
|
GE Security, Inc.
|
| GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power
1,048,576 words x 16 bit DRAM, 70ns, low power
1,048,576 words x 16 bit DRAM, 60ns, low power
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
| EM640FR16AS-45L EM640FR16AS-45S EM640FR16AS-85L EM |
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic...
Emerging Memory & Logic Solutions Inc
|
